An optical method for studying carrier diffusion in strained „InP...2 /„GaP...2 quantum wires
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چکیده
The carrier transport in strain-induced laterally ordered ~InP!2 /~GaP!2 quantum wire ~QWR! samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the @110# and @11̄0# directions ~perpendicular and parallel to the QWRs, respectively! was observed. The temperature dependence of this anisotropy was measured, revealing that carrier diffusion along the QWR direction is thermally activated. © 1998 American Institute of Physics. @S0003-6951~98!01601-5#
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تاریخ انتشار 1997